- Table I-5 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for MEMS Manufacturing
| Process type factors | Process gas i | CF | C | CHF | CH | C | c− C | NF Remote | NF | SF | C | C | C | Etch 1-U | 0.7 | 10.4 | 10.4 | 10.06 | NA | 10.2 | NA | 0.2 | 0.2 | 0.1 | 0.2 | NA | Etch BCF | NA | 10.4 | 10.07 | 10.08 | NA | 0.2 | NA | NA | NA | 10.3 | 0.2 | NA | Etch BC | NA | NA | NA | NA | NA | 0.2 | NA | NA | NA | 10.2 | 0.2 | NA | CVD Chamber Cleaning 1-U | 0.9 | 0.6 | NA | NA | 0.4 | 0.1 | 0.02 | 0.2 | NA | NA | 0.1 | 0.1 | CVD Chamber Cleaning BCF | NA | 0.1 | NA | NA | 0.1 | 0.1 | 20.02 | 20.1 | NA | NA | 0.1 | 0.1 | CVD Chamber Cleaning BC | NA | NA | NA | NA | NA | NA | NA | NA | NA | NA | NA | 0.4 |
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1 Estimate includes multi-gas etch processes.
2 Estimate reflects presence of low-k, carbide and multi-gas etch processes that may contain a C-containing fluorinated GHG additive.