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Table I-18 to Subpart I of Part 98—Default Factors for Gamma (gi,p and gk,i,p) for Semiconductor Manufacturing and for MEMS and PV Manufacturing Under Certain Conditions * for Use With the Stack Testing Method

Process type In-situ thermal or in-situ plasma cleaning Remote plasma cleaning Gas CF4C2F6c-C4F8NF3SF6C3F8CF4NF3If manufacturing wafer sizes ≤200 mm AND manufacturing 300 mm (or greater) wafer sizesgi139.34.71411NANA5.7 gCF4,iNA236.7638.7NANA58 gC2F6,iNANANANA3.4NANANA gCHF3,iNANANANANANANA0.24 gCH2F2,iNANANANANANANA111 gCH3F,iNANANANANANANA33 If manufacturing ≤200 mm OR manufacturing 300 mm (or greater) wafer sizesgi (≤ 200 mm wafer size)139.34.72.911NANA1.4 gCF4,i (≤200 mm wafer size)NA236.71108.7NANA36 gC2F6,i (≤200 mm wafer size)NANANANA3.4NANANA gi (300 mm wafer size)NANANA26NANANA10 gCF4,i (300 mm wafer size)NANANA17NANANA80 gC2F6,i (300 mm wafer size)NANANANANANANANA gCHF3,i (300 mm wafer size)NANANANANANANA0.24 gCH2F2,i (300 mm wafer size)NANANANANANANA111 gCH3F,i (300 mm wafer size)NANANANANANANA33

* If you manufacture MEMS or PVs and use semiconductor tools and processes, you may use the corresponding g in this table. For all other tools and processes, a default g of 10 must be used.

[89 FR 31922, Apr. 25, 2024]