1. Regulations
  2. title 40
  3. chapter I-i22
  4. part 98
  5. subpart I
  6. appendix-i 15

- Table I-16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Link to an amendment published at 89 FR 31922, Apr. 25, 2024.
Manufacturing type/process type/gas Default
DRE
(percent) 		MEMS, LCDs, and PV Manufacturing60 Semiconductor Manufacturing: Plasma Etch/Wafer Clean Process Type: CF475 CH3F97 CHF397 CH2F297 C2F697 C3F897 C4F697 C4F897 C5F897 SF697 NF396 All other carbon-based plasma etch/wafer clean fluorinated GHG60 Chamber Clean Process Type: NF388 All other chamber clean fluorinated GHG60 N2O Processes: CVD and all other N2O-using processes60
[78 FR 68234, Nov. 13, 2013]

AUTHORITY: 42 U.S.C. 7401-7671q.

SOURCE: 74 FR 56374, Oct. 30, 2009, unless otherwise noted.